Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications

被引：81

作者：

Grandusky, J. R. ^{[1
]}

Smart, J. A. ^{[1
]}

Mendrick, M. C. ^{[1
]}

Schowalter, L. J. ^{[1
]}

Chen, K. X. ^{[2
]}

Schubert, E. F. ^{[2
]}

机构：

[1] Crystal IS Inc, Green Isl, NY 12183 USA

[2] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Metal-organic vapor phase epitaxy; Nitrides; Light-emitting diodes; LIGHT-EMITTING-DIODES;

D O I：

10.1016/j.jcrysgro.2009.01.101

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Recently it has been discovered that when growing AlxGa1-xN on low-defect-density bulk AlN substrates pseudomorphic layers can be achieved with a thickness far exceeding the critical thickness as given by the Matthews and Blakeslee model. For instance, the critical thickness of an AlxGa1-xN layer (with x=0.6) is about 40 nm thick. However we have been able to grow layers with this composition that are pseudomorphic with a thickness exceeding the critical thickness by more than an order of magnitude. This work defines the limits of pseudomorphic growth on low defect density, bulk AlN substrates to obtain low defect density, high-power UV LEDs. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2864 / 2866

页数：3

共 8 条

[1] Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates [J].