Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications

Dual-metal junctionless nanotube field-effect transistors (DMJN-TFETs) for improvised analog and digital applications are described. It has been realized that, compared with existing junctionless nanowire FETs, in particular, junctionless-gate all around (J-GAA) metal oxide semiconductors (MOS) FETs, dual-metal junctionless-gate all around (DMJ-GAA) MOSFETs, and junctionless nanotube (JN) FETs, DMJN-TFET MOSFETs exhibit higher I-ds, g(m), g(d) and f(T) compared with the JNFETs, making it a favorable device for high-frequency analog FET applications. DMJN TFETs exhibit a surpassing I-ON/I-OFF ratio, with the subthreshold slope approaching the ideal values, a mitigated device channel resistance (R-ch), advanced early voltage (V-EA), a higher transconductance generation factor, maximum transducer power gain, unilateral power gain, and minimized noise conductivity and noise figure. Also, the small signal metrics including the transmission coefficients (S-21 and S-12) and reflection coefficients (S-11 and S-22) have been investigated to authenticate the small signal conduct of our device. These improvised characteristics make a DMJN-TFET the most suitable device design for both digital and analog applications employing FETs.