Tight-binding Calculation of Exciton States in InAs Nanocrystals

被引：2
作者：
Sukkabot, Worasak [1 ]
机构：
[1] Ubon Ratchathani Univ, Dept Phys, Fac Sci, Ubon Ratchathani 34190, Thailand
来源：
INTEGRATED FERROELECTRICS | 2014年 / 156卷 / 01期
关键词：
Tight-binding calculations; nanocrystals; exciton; QUANTUM DOTS; SEMICONDUCTORS; ATOMS;
D O I：
10.1080/10584587.2014.906220
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We theoretically study the electron-hole interactions in spherical InAs nanocrystals by incorporating coulomb energies into the sp(3) d(5) s* tight-binding model. The comparisons of excitonic gaps and single-particle gaps for InAs nanocrystals as a function of the radius with tight-binding method, pseudopotential method and experimental data are realized. Finally the calculated results are in agreement with other calculations and experimental data.
引用
收藏
页码：29 / 35
页数：7
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