Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

被引：15
|
作者：
Rosales, D. [1 ,2 ]
Gil, B. [1 ,2 ]
Bretagnon, T. [1 ,2 ]
Guizal, B. [1 ,2 ]
Izyumskaya, N. [3 ]
Monavarian, M. [3 ]
Zhang, F. [3 ]
Okur, S. [3 ]
Avrutin, V. [3 ]
Ozgur, U. [3 ]
Morkoc, H. [3 ]
机构：
[1] CNRS, UMR 5221, Lab Charles Coulomb, F-34095 Montpellier, France
[2] Univ Montpellier 2, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France
[3] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23238 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 09期
基金：
美国国家科学基金会;
关键词：
PIEZOELECTRIC FIELDS; LOCALIZATION;
D O I：
10.1063/1.4894513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7 degrees-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semipolar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 x 10(12) cm(-2) and a radiative recombination time of tau(loc) = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers. (c) 2014 AIP Publishing LLC.
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页数：8
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