Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

被引：8

作者：

Schaefer, A. ^{[1
,2
]}

Besmehn, A. ^{[3
]}

Luysberg, M. ^{[4
,5
]}

Winden, A. ^{[1
,2
]}

Stoica, T. ^{[1
,2
]}

Schnee, M. ^{[2
,6
]}

Zander, W. ^{[1
,2
]}

Niu, G. ^{[7
]}

Schroeder, T. ^{[7
]}

Mantl, S. ^{[1
,2
]}

Hardtdegen, H. ^{[1
,2
]}

Mikulics, M. ^{[1
,2
]}

Schubert, J. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany

[2] JARA, Aachen, Germany

[3] Forschungszentrum Julich, Cent Inst Engn Elect & Analyt ZEA 3, D-52425 Julich, Germany

[4] Forschungszentrum Julich, Ernst Ruska Ctr, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany

[6] Forschungszentrum Julich, Peter Grunberg Inst 6, D-52425 Julich, Germany

[7] IHP, D-15236 Frankfurt, Oder, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 07期

关键词：

GaN; high-k; pulsed laser deposition; rare earth scandates; GdScO3; GROWTH;

D O I：

10.1088/0268-1242/29/7/075005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GdScO3 was deposited by pulsed laser deposition on two different templates suitable for III-N growth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beam epitaxial Y2O3 on Si (1 1 1). The structure and crystallinity of the layers were determined as well as the band gap and permittivity of the material. It was found that GdScO3 grows epitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic or amorphous phases. A band gap and permittivity kappa of 5.2 eV and 24 were found, respectively, making GdScO3 a promising epitaxial gate dielectric for III-N transistor applications.

引用

页数：5

共 50 条

[41] Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask [J].

Tao, Jiahao ;

Xu, Yu ;

Li, Jianjie ;

Cai, Xin ;

Wang, Yuning ;

Wang, Guobin ;

Cao, Bing ;

Xu, Ke .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (02)

[42] Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics [J].

Zhu, Cheng-Yi ;

Zhang, Meng-Ru ;

Chen, Qing ;

Yue, Lin-Qing ;

Song, Rong ;

Wang, Cong ;

Li, Hui-Zhen ;

Zhou, Feichi ;

Li, Yang ;

Zhao, Weiwei ;

Zhen, Liang ;

Si, Mengwei ;

Li, Jia ;

Wang, Jingli ;

Chai, Yang ;

Xu, Cheng-Yan ;

Qin, Jing-Kai .

NATURE ELECTRONICS, 2024, 7 (12) :1137-1146

[43] Growth and characterisation of high quality GaN film by epitaxial lateral overgrowth [J].

Sheng, HM ;

Wen, W ;

Peng, L ;

Wei, L ;

Shan, WL ;

Jin, CS .

PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 :312-315

[44] Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology [J].

Zhang, Dongguo ;

Li, Zhonghui ;

Yang, Qiankun ;

Peng, Daqing ;

Li, Chuanhao ;

Luo, Weike ;

Dong, Xun .

APPLIED SURFACE SCIENCE, 2020, 509

[45] Integration of LaLuO3 (κ ∼ 30) as High-κ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process [J].

Oezben, E. Durgun ;

Lopes, J. M. J. ;

Nichau, A. ;

Schnee, M. ;

Lenk, S. ;

Besmehn, A. ;

Bourdelle, K. K. ;

Zhao, Q. T. ;

Schubert, J. ;

Mantl, S. .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (01) :15-17

[46] Integration of epitaxial Pb(Zr0.52Ti0.48)O3 films on GaN/AlGaN/GaN/Si(111) substrates using rutile TiO2 buffer layers [J].

Elibol, K. ;

Nguyen, M. D. ;

Hueting, R. J. E. ;

Gravesteijn, D. J. ;

Koster, G. ;

Rijnders, G. .

THIN SOLID FILMS, 2015, 591 :66-71

[47] High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties [J].

Chang, W. H. ;

Lee, C. H. ;

Chang, P. ;

Chang, Y. C. ;

Lee, Y. J. ;

Kwo, J. ;

Tsai, C. C. ;

Hong, J. M. ;

Hsu, C. -H. ;

Hong, M. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :2183-2186

[48] Temperature- and field-dependent leakage current of epitaxial YMnO3/GaN heterostructure [J].

Wu, H. ;

Yuan, J. ;

Peng, T. ;

Pan, Y. ;

Han, T. ;

Liu, C. .

APPLIED PHYSICS LETTERS, 2009, 94 (12)

[49] Ruthenium oxide metal nanocrystal capacitors with high-κ dielectric tunneling barriers for nanoscale nonvolatile memory device applications [J].

Das, Atanu ;

Maikap, S. ;

Lin, C. -H. ;

Tzeng, P. -J. ;

Tien, T. -C. ;

Wang, T. -Y. ;

Chang, L. -B. ;

Yang, J. -R. ;

Tsai, M. -J. .

MICROELECTRONIC ENGINEERING, 2010, 87 (10) :1821-1827

[50] High-Temperature Stability Amorphous Ternary AlBN Dielectric Films on N++GaN [J].

Liu, Fengfeng ;

Li, Yuxiong ;

Devaux, Xavier ;

Lu, Yuan ;

Luo, Yi ;

Sui, Zhanpeng ;

Cai, Yong ;

Jiang, Chunping .

ADVANCED ENGINEERING MATERIALS, 2022, 24 (10)

← 1 2 3 4 5 →