Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

被引：8

作者：

Schaefer, A. ^{[1
,2
]}

Besmehn, A. ^{[3
]}

Luysberg, M. ^{[4
,5
]}

Winden, A. ^{[1
,2
]}

Stoica, T. ^{[1
,2
]}

Schnee, M. ^{[2
,6
]}

Zander, W. ^{[1
,2
]}

Niu, G. ^{[7
]}

Schroeder, T. ^{[7
]}

Mantl, S. ^{[1
,2
]}

Hardtdegen, H. ^{[1
,2
]}

Mikulics, M. ^{[1
,2
]}

Schubert, J. ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany

[2] JARA, Aachen, Germany

[3] Forschungszentrum Julich, Cent Inst Engn Elect & Analyt ZEA 3, D-52425 Julich, Germany

[4] Forschungszentrum Julich, Ernst Ruska Ctr, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Peter Grunberg Inst 5, D-52425 Julich, Germany

[6] Forschungszentrum Julich, Peter Grunberg Inst 6, D-52425 Julich, Germany

[7] IHP, D-15236 Frankfurt, Oder, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 07期

关键词：

GaN; high-k; pulsed laser deposition; rare earth scandates; GdScO3; GROWTH;

D O I：

10.1088/0268-1242/29/7/075005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GdScO3 was deposited by pulsed laser deposition on two different templates suitable for III-N growth: metalorganic vapour phase epitaxial GaN (0 0 0 1) on sapphire and molecular beam epitaxial Y2O3 on Si (1 1 1). The structure and crystallinity of the layers were determined as well as the band gap and permittivity of the material. It was found that GdScO3 grows epitaxially and crystallizes hexagonally in contrast to the usually found orthorhombic or amorphous phases. A band gap and permittivity kappa of 5.2 eV and 24 were found, respectively, making GdScO3 a promising epitaxial gate dielectric for III-N transistor applications.

引用

页数：5

共 50 条

[31] Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure [J].

Jeong, Ye-Sul ;

Ahn, Kyun ;

Jeong, Se-Young ;

Yoon, Soon-Gil ;

Kim, Hyun-Gyu ;

Kim, Jong-Pil ;

Ahn, Hyeong-Soo ;

Kim, Hong-Seung ;

Cho, Chae-Ryong .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04) :0411011-0411014

[32] High-Performance GaN MOSFET With High-k LaAlO3/SiO2 Gate Dielectric [J].

Tsai, C. Y. ;

Wu, T. L. ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (01) :35-37

[33] High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs [J].

Das, Partha .

JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (07) :3415-3425

[34] Epitaxial PbxZr1-xTiO3 on GaN [J].

Paisley, E. A. ;

Craft, H. S. ;

Losego, M. D. ;

Lu, H. ;

Gruverman, A. ;

Collazo, R. ;

Sitar, Z. ;

Maria, J. -P. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (07)

[35] Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures [J].

Jin, Eric N. ;

Downey, Brian P. ;

Gokhale, Vikrant J. ;

Roussos, Jason A. ;

Hardy, Matthew T. ;

Growden, Tyler A. ;

Nepal, Neeraj ;

Katzer, D. Scott ;

Calame, Jeffrey P. ;

Meyer, David J. .

APL MATERIALS, 2021, 9 (11)

[36] High-k Dielectric Passivation for GaN Diode with a Field Plate Termination [J].

Yoshino, Michitaka ;

Horikiri, Fumimasa ;

Ohta, Hiroshi ;

Yamamoto, Yasuhiro ;

Mishima, Tomoyoshi ;

Nakamura, Tohru .

ELECTRONICS, 2016, 5 (02)

[37] Graphene stabilized high-κ dielectric Y2O3 (111) monolayers and their interfacial properties [J].

Song, Ting Ting ;

Yang, Ming ;

Callsen, Martin ;

Wu, Qing Yun ;

Zhou, Jun ;

Wang, Shao Feng ;

Wang, Shi Jie ;

Feng, Yuan Ping .

RSC ADVANCES, 2015, 5 (102) :83588-83593

[38] Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask [J].

Lei, Menglai ;

Chen, Huanqing ;

Khan, Muhammad Saddique Akbar ;

Li, Shukun ;

Lang, Rui ;

Wen, Peijun ;

Yu, Guo ;

Jiang, Shengxiang ;

Zong, Hua ;

Hu, Xiaodong .

APPLIED SURFACE SCIENCE ADVANCES, 2023, 17

[39] Ferroelectric and Magnetic Properties of Hexagonal ErFeO3 Epitaxial Films [J].

Chen, Binjie ;

Ohta, Hiromichi ;

Katayama, Tsukasa .

ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (09) :4547-4552

[40] Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors [J].

Leone, Stefano ;

Fornari, Roberto ;

Bosi, Matteo ;

Montedoro, Vincenzo ;

Kirste, Lutz ;

Doering, Philipp ;

Benkhelifa, Fouad ;

Prescher, Mario ;

Manz, Christian ;

Polyakov, Vladimir ;

Ambacher, Oliver .

JOURNAL OF CRYSTAL GROWTH, 2020, 534

← 1 2 3 4 5 →