Low temperature deposition with inductively coupled plasma

被引：0

作者：

Lee, Seung-Hoon ^{[1
]}

Jung, Dong-Ha ^{[1
]}

Jung, Seung-Jae ^{[1
]}

Hong, Seung-Chan ^{[1
]}

Lee, Jung-Joong ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH | 2006年 / 97卷 / 04期

关键词：

inductively coupled plasma; TiB2; TiN; TiO2; SnO2;

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The processing temperature of chemical and physical vapor deposition could be successfully lowered by applying inductively coupled plasma without deteriorating the film quality. Despite the low process temperature, the deposition rate was higher than that observed in conventional deposition processes, and the impurity content could be kept low. Some examples of inductively coupled plasma applications e. g. TiB2, TiN, TiO2, and SnO2 films are shown.

引用

页码：475 / 479

页数：5

共 50 条

[11] Low-temperature synthesis of graphene on Fe2O3 using inductively coupled plasma chemical vapor deposition
Lam Van Nang
Kim, Eui-Tae
MATERIALS LETTERS, 2013, 92 : 437 - 439
[12] Temperature of a Semiconducting Substrate Exposed to an Inductively Coupled Plasma
Lim, Yeong-Dae
Lee, Dae-Yeong
Yoo, Won Jong
Ko, Han Seo
Lee, Soo-Hong
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (02) : 262 - 270
[13] Deposition of a-C:H:SiOx Coatings Using Low-Frequency Inductively Coupled Plasma
Grenadyorov, Alexander S.
Semenov, Vyacheslav A.
Oskirko, Vladimir O.
Oskomov, Konstantin V.
Solovyev, Andrey A.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (11):
[14] Temperature dependence of inductively coupled plasma assisted growth of TiN thin films
Meng, WJ
Curtis, TJ
Rehn, LE
Baldo, PM
SURFACE & COATINGS TECHNOLOGY, 1999, 120 : 206 - 212
[15] Low temperature growth of amorphous and polycrystalline silicon films from a modified inductively coupled plasma
Goto, M
Toyoda, H
Kitagawa, M
Hirao, T
Sugai, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (6A): : 3714 - 3720
[16] Numerical Modeling of an Inductively Coupled Plasma Sputter Sublimation Deposition System
Joo, Junghoon
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2014, 23 (04): : 179 - 186
[17] Highly selective SiO2 etching in low-electron-temperature inductively coupled plasma
Bai, K. H.
Chang, H. Y.
Kwon, G. C.
Kim, H. S.
Kim, J. S.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3602 - 3604
[18] Measurement of Neutral Gas Temperature in a 13.56 MHz Inductively Coupled Plasma
Jayapalan, Kanesh K.
Chin, Oi Hoong
NATIONAL PHYSICS CONFERENCE 2014 (PERFIK 2014), 2015, 1657
[19] Plasma diagnostic on a low-flow plasma for inductively coupled plasma optical emission spectrometry
Engelhard, Carsten
Chan, George C. -Y.
Gamez, Gerardo
Buscher, Wolfgang
Hieftje, Gary M.
SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2008, 63 (06) : 619 - 629
[20] Nano-crystalline silicon thin films grown by the inductively coupled plasma assisted CFUBM at low temperature
Shin, Kyung S.
Choi, Yoon S.
Choi, In S.
Setsuhara, Y.
Han, Jeon G.
SURFACE & COATINGS TECHNOLOGY, 2010, 205 : S227 - S230

← 1 2 3 4 5 →