Thermoelectric properties of tetrahedrally bonded wide-gap stannite compounds Cu2ZnSn1-xInxSe4

被引：234

作者：

Shi, X. Y. ^{[1
,2
]}

Huang, F. Q. ^{[1
]}

Liu, M. L. ^{[1
,2
]}

Chen, L. D. ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 12期

基金：

美国国家科学基金会;

关键词：

copper compounds; energy gap; indium compounds; semiconductor doping; ternary semiconductors; thermal conductivity; thermoelectricity; tin compounds; wide band gap semiconductors; zinc compounds; TEMPERATURE; DEVICES;

D O I：

10.1063/1.3103604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is usually accepted that good thermoelectric (TE) materials should be narrow-gap semiconductors. Here we show an example that the tetrahedrally bonded stannite compound Cu2ZnSnSe4 with a band gap of 1.44 eV can also exhibit a high figure of merit at intermediate temperature. The highly distorted structure strives for the relatively low thermal conductivity, and the tunability of the electrical properties were demonstrated through doping. The maximum ZT of Cu2ZnSn0.90In0.10Se4 reaches 0.95 at 850 K. This work may open a way for exploring high-performance TE materials with the family of widely existing tetrahedrally bonded semiconductors.

引用

页数：3

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