Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films

被引：21

作者：

Zhang, Xiao ^{[1
]}

Zhang, Wei ^{[1
]}

Zhang, Xinghua ^{[1
]}

Xu, Xuewen ^{[1
]}

Meng, Fanbin ^{[1
]}

Tang, C. C. ^{[1
]}

机构：

[1] Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China

来源：

ADVANCES IN CONDENSED MATTER PHYSICS | 2014年 / 2014卷

基金：

中国国家自然科学基金;

关键词：

ZINC-OXIDE;

D O I：

10.1155/2014/806327

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.

引用

页数：6

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