Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime

被引:23
|
作者
Adamo, Gabriele [1 ]
Agro, Diego [1 ]
Stivala, Salvatore [1 ]
Parisi, Antonino [1 ]
Giaconia, Giuseppe Costantino [1 ]
Busacca, Alessandro [1 ]
Mazzillo, Massimo [2 ]
Sanfilippo, Delfo [2 ]
Fallica, Giorgio [2 ]
机构
[1] Univ Palermo, Dept Energy Informat Engn & Math Models, I-90128 Palermo, Italy
[2] STMicroelectronics, Res & Dev IMS, I-95121 Catania, Italy
关键词
Avalanche photodiode (APD); photodetector; responsivity; silicon photomultiplier (SiPM); single-photon avalanche diode (SPAD); AVALANCHE PHOTODIODES; DETECTION EFFICIENCY;
D O I
10.1109/TED.2013.2282709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340-820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
引用
收藏
页码:3718 / 3725
页数:8
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