Sub-λ/10 spot size in semiconductor solid immersion lens microscopy

被引:4
作者
Banaee, Mohamadreza G. [1 ]
Uenlue, M. Selim [1 ,2 ]
Goldberg, Bennett B. [1 ,2 ]
机构
[1] Boston Univ, Photon Ctr, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Photon Ctr, Dept Phys, Boston, MA 02215 USA
关键词
Optical microscopy; High-resolution imaging; Solid immersion lens; Apodization; Particle swarm optimization; SUBSURFACE MICROSCOPY; ORDER; BEAMS; POLARIZATION;
D O I
10.1016/j.optcom.2013.11.005
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The angular spectrum of radially polarized Laguerre-Gaussian beams was tailored by an annular aperture in a semiconductor solid immersion lens microscope. The radii of two concentric rings in the amplitude aperture were optimized by a multi-objective particle swarm optimization algorithm. A GaAs solid immersion lens with NA=3.4 was used in the numerical calculation and a spot size of 98 nm (<lambda/10) at a wavelength of 1064 nm illumination was obtained. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:108 / 111
页数:4
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