Effect of semicon-dielectric interface on conductivity and electric field distribution

被引:22
作者
Hjerrild, J [1 ]
Holboll, J
Henriksen, M
Boggs, S
机构
[1] Tech Univ Denmark, Dept Elect & Power Engn, DK-2800 Lyngby, Denmark
[2] Univ Connecticut, Elect Insulat Res Ctr, Dept Elect Engn, Storrs, CT 06269 USA
[3] Univ Connecticut, Elect Insulat Res Ctr, Dept Phys, Storrs, CT 06269 USA
[4] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON, Canada
关键词
Approximation theory - Computational methods - Dielectric properties - Electric charge measurement - Electric conductivity of solids - Electric distortion - Electric fields - Electric space charge - Electrodes - Interfaces (materials) - Semiconductor materials;
D O I
10.1109/TDEI.2002.1024438
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Development of solid dielectric dc transmission class cable has become a priority throughout much of the world. Interdiffusion between the semiconducting electrode materials and the dielectric inevitably causes variations in conductivity of the dielectric near the semicon which results in distortion of the electric field and space charge formation under dc conditions. Analytical approximations and numerical computations provide a basis for analyzing space charge measurements, and based on such space charge measurements and the analysis, we estimate the field distortion for several material systems.
引用
收藏
页码:596 / 603
页数:8
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