A T-type method for characterization of the thermoelectric performance of an individual free-standing single crystal Bi2S3 nanowire

被引：50

作者：

Ma, Weigang ^{[1
]}

Miao, Tingting ^{[1
,2
]}

Zhang, Xing ^{[1
]}

Takahashi, Koji ^{[3
]}

Ikuta, Tatsuya ^{[3
]}

Zhang, Boping ^{[4
]}

Ge, Zhenhua ^{[4
]}

机构：

[1] Tsinghua Univ, Dept Engn Mech, Minist Educ, Key Lab Thermal Sci & Power Engn, Beijing 100084, Peoples R China

[2] China Univ Petr, Coll Mech & Transportat Engn, Beijing Key Lab Proc Fluid Filtrat & Separat, Beijing 102249, Peoples R China

[3] Kyushu Univ, Grad Sch Engn, Dept Aeronaut & Astronaut, Fukuoka 8190395, Japan

[4] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Key Lab New Energy Mat & Technol, Beijing 100083, Peoples R China

来源：

NANOSCALE | 2016年 / 8卷 / 05期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

THERMAL-CONDUCTIVITY; SILICON NANOWIRES; ELECTRICAL-PROPERTIES; TRANSPORT-PROPERTIES; BISMUTH TRISULFIDE; DEVICES; POLYCRYSTALS; ENERGY; MERIT;

D O I：

10.1039/c5nr05946a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A comprehensive method to evaluate the thermoelectric performance of one-dimensional nano-structures, called the T-type method, has been first developed. The thermoelectric properties, including the Seebeck coefficient, thermal conductivity and electrical conductivity, of an individual free-standing single crystal Bi2S3 nanowire have been first characterized by applying the T-type method. The determined figure of merit is far less than the reported values of nanostructured bulk Bi2S3 samples, and the mechanism is that the Seebeck coefficient is nearly zero in the temperature range of 300-420 K and changes its sign at 320 K.

引用

页码：2704 / 2710

页数：7

共 50 条

[1] Tellurium-Free Thermoelectric: The Anisotropic n-Type Semiconductor Bi2S3 [J].