Solution of the Poisson-Schrodinger problem for a single-electron transistor

被引：31

作者：

Bednarek, S ^{[1
]}

Szafran, B ^{[1
]}

Adamowski, J ^{[1
]}

机构：

[1] Univ Min & Met, AGH, Fac Phys & Nucl Techniques, Krakow, Poland

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.61.4461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An outstanding problem of a quantitative description of electronic properties of a vertical gated quantum dot has been solved by a self-consistent approach to the Poisson and Schrodinger equations. We have calculated the confinement potential and determined the conditions for single-electron tunneling. A good agreement with experiment has been obtained for the 12 single-electron current peaks as a function of gate voltage V-g for source-drain voltage V-sd = 0, the bounds on diamond-shaped regions in the V-g - V-sd plane, for which the flow of current is blocked; and the current-gate voltage characteristics in an external magnetic field.

引用

页码：4461 / 4464

页数：4

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