Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

被引：24

作者：

Poli, Stefano ^{[1
]}

Pala, Marco G. ^{[2
]}

Poiroux, Thierry ^{[3
]}

机构：

[1] Univ Bologna, Adv Res Ctr Elect Syst, I-40122 Bologna, Italy

[2] Grenoble INP MINATEC, IMEP LAHC UMR CNRS INPG UJF 5130, F-38016 Grenoble, France

[3] CEA LETI MINATEC, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 06期

关键词：

Effective mobility; non-equilibrium Green's function (NEGF); quasi-ballistic transport; remote Coulomb scattering (RCS); silicon nanowire (Si-NW); transfer characteristics; ELECTRON-MOBILITY; LIMITED MOBILITY; CARRIER TRANSPORT; INVERSION-LAYERS; GATE MOSFETS; MONTE-CARLO; OXIDE; TRANSISTORS; INSULATOR;

D O I：

10.1109/TED.2009.2019380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the influence of remote Coulomb scattering (RCS) due to trapped charges at the silicon oxide/high-kappa. material interface on the electrical performances of silicon nanowire (Si-NW) FETs. We address a full quantum analysis based on the 3-D self-consistent solution of the Poisson-Schrodinger equation within the coupled mode-space non-equilibrium Green's function (NEGF) formalism. We find that the RCS strongly affects the electrical performances of Si-NWs by increasing both the inverse subthreshold voltage slope and the I-off current. RCS-limited mobility, which is mainly determined by screening effects, is found to have quasi-linear dependence on the 1-D channel electron density, and its dependence on fixed charge density and interface layer thickness is discussed.

引用

页码：1191 / 1198

页数：8

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