Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

被引：57

作者：

Lauwers, A ^{[1
]}

de Potter, M ^{[1
]}

Chamirian, O ^{[1
]}

Lindsay, R ^{[1
]}

Demeurisse, C ^{[1
]}

Vrancken, C ^{[1
]}

Maex, K ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

Co-silicide; Ni-silicide; CoNi alloy; junction leakage; sheet resistance;

D O I：

10.1016/S0167-9317(02)00777-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As scaling progresses, conventional Co/Ti silicidation is facing difficulties related to the nucleation of the low resistive Co-disilicide phase during the second RTP step of silicidation. When linewidths, junction depths and silicide thicknesses are being reduced, the RTP2 thermal process window narrows down rapidly. It is expected that the process window can be widened by alloying the Co film with Ni, because the presence of Ni lowers the nucleation barrier for the Co-disilicide phase. Replacing Co-disilicide by Ni-monosilicide is a promising alternative because the same silicide sheet resistance can be obtained with 35% less silicon consumption. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：131 / 142

页数：12

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