Native defects in antiferromagnetic topological insulator MnBi2Te4

被引：58

作者：

Huang, Zengle ^{[1
]}

Du, Mao-Hua ^{[2
]}

Yan, Jiaqiang ^{[2
,3
]}

Wu, Weida ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[3] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

来源：

PHYSICAL REVIEW MATERIALS | 2020年 / 4卷 / 12期

关键词：

POINT;

D O I：

10.1103/PhysRevMaterials.4.121202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using scanning tunneling microscopy and spectroscopy, we visualized the native defects in antiferromagnetic topological insulator MnBi2Te4. Two native defects, Mn-Bi and Bi-Te antisites, can be well resolved in the topographic images. Mn Bi tend to suppress the density of states at the conduction band edge. Spectroscopy imaging reveals a localized peaklike local density of state at similar to 80 meV below the Fermi energy. A careful inspection of topographic and spectroscopic images, combined with density functional theory calculation, suggests this results from Bi-Mn antisites at Mn sites. The random distribution of Mn-Bi and Bi-Mn antisites results in spatial fluctuation of local density of states near the Fermi level in MnBi2Te4.

引用

页数：6

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