An EPR investigation of SiOx films with columnar structure

被引：4
作者：
Bratus', V. [1 ]
Indutnyi, I. [1 ]
Shepeliavyi, P. [1 ]
Torchynska, T. [2 ]
机构：
[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, UA-03680 Kiev, Ukraine
[2] ESFM, Inst Politecn Nacl, Mexico City 07738, DF, Mexico
来源：
PHYSICA B-CONDENSED MATTER | 2014年 / 453卷
关键词：
Porous SiOx films; Paramagnetic defects; EPR; EX center; ELECTRON-PARAMAGNETIC-RESONANCE; VISIBLE PHOTOLUMINESCENCE; THERMAL SIO2; SILICON; DEFECTS;
D O I：
10.1016/j.physb.2013.11.060
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of electron paramagnetic resonance (ERR) study of obliquely deposited porous SiOx films before and after thermal annealing in vacuum at 950 degrees C are presented. The low intensity slightly asymmetrical and featureless ERR line with a g-value of 2.0044 and a linewidth of 0.77 mT has been detected in as-sputtered films and attributed to dangling bonds of silicon atoms in amorphous SiOx domains with x=0.8. Successive annealing results in decreasing this line and the appearance of an intense ERR line with g=2.0025, linewidth of 0.11 mT and a hyperfine doublet with 1.6 mT splitting. According to the parameters this spectrum has been attributed to the EX center, a hole delocalized over Foul non-bridging oxygen atoms grouped around a Si vacancy in SiO2. The impact of chemical treatment before annealing and duration of anneals on the detect system is discussed. (C) 2013 Elsevier By. All rights reserved.
引用
收藏
页码：26 / 28
页数：3
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