Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers

被引：6

作者：

Deng, Wei ^{[1
]}

Xiao, Xiang ^{[2
]}

He, Xin ^{[1
]}

Lee, Chia-Yu ^{[3
]}

Zhang, Shengdong ^{[1
,2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[3] Shenzhen China Star Optoelect Technol Co Ltd, Shenzhen 518107, Peoples R China

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2015年 / 23卷 / 07期

基金：

中国国家自然科学基金;

关键词：

amorphous indium-gallium-zinc oxide (a-IGZO); RF sputtering; DC sputtering; oxygen vacancy; stability; THIN-FILM TRANSISTORS; OXIDE; TRANSPORT;

D O I：

10.1002/jsid.388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a comparative study of electrical properties and gate-bias stress stability between direct current (DC)-sputtered and radio frequency (RF)-sputtered amorphous indium-gallium-zinc oxide thin film transistors (a-IGZO TFTs) is conducted. The RF-sputtered a-IGZO TFTs show higher field-effect mobility and steeper sub-threshold slope. The DC-sputtered ones show a better uniformity of threshold voltage, enhanced stability under both positive bias stress and negative bias illumination stress. The X-ray photoelectron spectroscopy characterization of the a-IGZO films reveals that the concentration of oxygen vacancies and electron density in the RF-sputtered a-IGZO film is higher than that in the DC-sputtered one, which probably accounts for the differences of electrical properties between the RF-sputtered and DC-sputtered a-IGZO TFTs.

引用

页码：306 / 312

页数：7

共 25 条

[1]

Bae J.U.K., 2013, SID Symp. Dig. Tech. Pap, V44, P89, DOI [10.1002/j.2168-0159.2013.tb06148.x, DOI 10.1002/J.2168-0159.2013.TB06148.X]

[2] Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-ZnO Thin-Film Transistors [J].

Chen, Wei-Tsung ;

Lo, Shih-Yi ;

Kao, Shih-Chin ;

Zan, Hsiao-Wen ;

Tsai, Chuang-Chuang ;

Lin, Jian-Hong ;

Fang, Chun-Hsiang ;

Lee, Chung-Chun .

IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) :1552-1554

[3] Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors [J].

Conley, John F., Jr. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (04) :460-475

[4]

Deng W., 2012, EDSSC

[5]

Fung TC, 2009, J DISP TECHNOL, V5, P452, DOI [10.1109/JDT.2009.2025521, 10.1109/JDT.2009.2020611]

[6] Constant-Voltage-Bias Stress Testing of a-IGZO Thin-Film Transistors [J].

Hoshino, Ken ;

Hong, David ;

Chiang, Hai Q. ;

Wager, John F. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (07) :1365-1370

[7] Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states [J].

Hsieh, Hsing-Hung ;

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[8] Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors [J].

Ide, Keisuke ;

Kikuchi, Yutomo ;

Nomura, Kenji ;

Kimura, Mutsumi ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2011, 99 (09)

[9]

Jeong J.K., 2008, SID INT S DIGEST TEC, P1

[10] Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors [J].

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (11) :H873-H877

← 1 2 3 →