Scanning tunneling microscopy study of the stability of nanostructures on Si(111) at elevated temperature

被引:1
|
作者
Szkutnik, PD
Sander, D
Dulot, F
Kraus, A
Jeckstiess, C
d'Avitaya, FA
Neddermeyer, H
Hanbücken, M
机构
[1] CNRS, CRMC2, F-13288 Marseille, France
[2] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle Saale, Germany
关键词
silicon; scanning electron microscopy (SEM); scanning tunneling microscopy; step formation and bunching; surface structure; morphology; toughness and topography; vicinal single crystal surfaces;
D O I
10.1016/S0039-6028(02)01324-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The creation and local reorganisation of periodically structured Si(1 1 1) substrates is described. A regular hole pattern is produced on vicinal Si(1 1 1) surfaces by lithographic techniques. After heat treatment this pre-structured Si surface transforms into terraced and stepped regions. The resulting terrace size can be controlled by the layout of the hole pattern. The early stage of the structural changes were studied by scanning tunnelling microscopy and secondary electron microscopy as a function of the annealing temperature and for different dimensions of the hole pattern. A simple model is proposed which ascribes the observed morphological changes to an anisotropic surface diffusion on the patterned surface. It is proposed that the variation of the hole diameter and spacing between holes can be employed to control systematically the resulting surface structure after heat treatment. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:615 / 618
页数:4
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