Phase transformation pathways in amorphous germanium under indentation pressure

被引:13
作者
Deshmukh, S. [1 ]
Haberl, B. [1 ]
Ruffell, S. [1 ]
Munroe, P. [2 ]
Williams, J. S. [1 ]
Bradby, J. E. [1 ]
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
[2] Univ New S Wales, Sydney, NSW 2052, Australia
基金
澳大利亚研究理事会;
关键词
RAMAN MICROSPECTROSCOPY; SILICON; NANOINDENTATION; TRANSITIONS; GE; CRYSTALLIZATION; DEFORMATION;
D O I
10.1063/1.4871190
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanoindentation-induced phase transformations have been studied in amorphous Ge thin films. These films initially tend to deform via plastic flow of the amorphous phase under load but at a critical pressure a sudden phase transformation occurs. This transformation, to a soft metallic (beta-Sn-like)-Ge phase confined under the indenter, is signified by a "pop-in" event on loading. Following "pop-in," the indentation tests fall into two distinct types of behavior. In one case, the rate of deformation with increasing load after "pop-in" increases, and the observed end-phase following complete unloading is observed to be predominately diamond-cubic Ge. In the other case, the deformation rate (slope of the loading curve) remains the same as that before "pop-in," and the end phases following unloading are found to contain predominantly unstable r8 and more stable hexagonal Ge phases. The different transformation pathways for these two cases are shown to be related to the probability that the soft (beta-Sn-like)-Ge phase volume, which suddenly forms at the transformation pressure, is either unconstrained by the indenter tip (the first case) or totally constrained under the indenter tip (in the latter case). (C) 2014 AIP Publishing LLC.
引用
收藏
页数:10
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