Sharp emission from single InAs quantum dots grown on vicinal GaAs surfaces

被引：10
|
作者：
Perinetti, U. [1 ]
Akopian, N. [1 ]
Samsonenko, Yu. B. [2 ,3 ,4 ]
Bouravleuv, A. D. [2 ,3 ]
Cirlin, G. E. [2 ,3 ,4 ]
Zwiller, V. [1 ]
机构：
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia
[4] Inst Analyt Instrumentat, St Petersburg 190103, Russia
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期
关键词：
excitons; fine structure; III-V semiconductors; indium compounds; monolayers; photoluminescence; semiconductor quantum dots; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; PHOTONS; TEMPERATURE; THICKNESS; GAAS(100);
D O I：
10.1063/1.3125430
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski-Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime measurements reveal an exciton lifetime of 500 ps. Polarization measurements show an exciton fine structure splitting of 15 mu eV and allow to identify the exciton and charged exciton transitions with linewidth as narrow as 23 mu eV.
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页数：3
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