Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

被引：52

作者：

Saitoh, M ^{[1
]}

Hiramoto, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1710709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First room-temperature (RT) observation of extended Coulomb blockade (CB) region due to quantum confinement in the ultrasmall silicon dot in a single-hole transistor (SHT) is described. We fabricate single-dot SHTs in the form of metal-oxide-semiconductor field-effect transistors with an extremely constricted channel. Both large CB oscillation with the peak-to-valley current ratio (PVCR) of 40.4 and clear negative differential conductance (NDC) with the PVCR of 11.8 (highest ever reported) are observed at RT in the fabricated device. The observed NDC is attributable to the resonant tunneling due to the large quantum level spacing in the ultrasmall dot whose size is estimated to be about 2 nm. (C) 2004 American Institute of Physics.

引用

页码：3172 / 3174

页数：3

共 19 条

[1]

Fujisawa T, 1996, APPL PHYS LETT, V68, P526, DOI 10.1063/1.116388

[2] On the origin of tunneling barriers in silicon single electron and single hole transistors [J].

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1126-1128

[3] Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].

Ishikuro, H ;

Fujii, T ;

Saraya, T ;

Hashiguchi, G ;

Hiramoto, T ;

Ikoma, T .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3585-3587

[4] Quantum mechanical effects in the silicon quantum dot in a single-electron transistor [J].

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3691-3693

[5] Spin-dependent Coulomb blockade in a silicon-on-insulator-based single-electron transistor [J].

Lee, SD ;

Park, KS ;

Park, JW ;

Moon, YM ;

Choi, JB ;

Yoo, KH ;

Kim, J .

APPLIED PHYSICS LETTERS, 2000, 77 (15) :2355-2357

[6] Observation and circuit application of negative differential conductance in silicon single-electron transistors [J].

Ono, Y ;

Takahashi, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2569-2573

[7] OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE [J].

REED, MA ;

RANDALL, JN ;

AGGARWAL, RJ ;

MATYI, RJ ;

MOORE, TM ;

WETSEL, AE .

PHYSICAL REVIEW LETTERS, 1988, 60 (06) :535-537

[8] Spin transitions in a small Si quantum dot [J].

Rokhinson, LP ;

Guo, LJ ;

Chou, SY ;

Tsui, DC .

PHYSICAL REVIEW B, 2001, 63 (03)

[9] Large Coulomb blockade oscillations at room temperature in ultranarrow wire channel MOSFETs formed by slight oxidation process [J].

Saitoh, M ;

Murakami, T ;

Hiramoto, T .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2003, 2 (04) :241-245

[10] Room-temperature observation of negative differential conductance due to large quantum level spacing in silicon single-electron transistor [J].

Saitoh, M ;

Hiramoto, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2A) :L210-L213

← 1 2 →