Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

被引：83

作者：

Feng, Wuwei ^{[1
]}

Fu, Xiao ^{[1
]}

Wan, Caihua ^{[2
]}

Yuan, Zhonghui ^{[2
]}

Han, Xiufeng ^{[2
]}

Nguyen Van Quang ^{[3
]}

Cho, Sunglae ^{[3
]}

机构：

[1] China Univ Geosci, Sch Mat Sci & Technol, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 11期

关键词：

Ti2MnAl; spin gapless semiconductors; spintronics; Heusler compounds; MAGNETIC-PROPERTIES; THIN-FILMS; MN;

D O I：

10.1002/pssr.201510340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel Heusler ferrimagnet Ti2MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin-gapless-semiconductor (SGS) nature of the stoichiometric Ti2MnAl, in agreement with theoretical prediction. The as-grown SGS-like Ti2MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor-like behavior at room temperature allowing good compatibility with commercial Si-based semiconductor. In this regards, Ti2MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：641 / 645

页数：5

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