Normally off-mode AlGaN/GaN heterostructure field effect transistor using P-type gate contact

被引：0

作者：

Tsuyukuchi, Norio ^{[1
]}

Nagamatsu, Kentaro ^{[1
]}

Hirose, Yoshikazu ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Kamiyma, Satoshi ^{[1
]}

Amano, Hiroshi ^{[1
]}

Akasaki, Isamu ^{[1
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Century COE Program NanoFactory 21, Tempaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan

来源：

GAN, AIN, INN AND RELATED MATERIALS | 2006年 / 892卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A normally off-mode AlGaN/GaN heterostructure field effect transistor (HFET) using a p-type GaN gate was fabricated and their static properties were compared with those of HFET having a Schottky gate. HFET having a p-GaN gate contact shows a very low leakage current density of 18.2 mu A/mm at V-GS and V-DS of 0 V and 20 V, respectively.

引用

页码：383 / +

页数：2

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