Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition

被引：76

作者：

Kim, HW ^{[1
]}

Kim, NH ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED SURFACE SCIENCE | 2004年 / 230卷 / 1-4期

关键词：

MOCVD; Ga2O3; annealing; thin film;

D O I：

10.1016/j.apsusc.2004.02.063

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have prepared the gallium oxide (Ga2O3) thin films on sapphire substrates by the metal organic chemical vapor deposition (MOCVD) technique. We have compared the two films with and without the thermal annealing by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and the photoluminescence (PL) spectra. Postdeposition annealing of amorphous Ga2O3 films was found to increase the degree of crystallization and the surface roughness. The PL emission intensities of bands in the blue-green and the ultraviolet regions increased by the thermal annealing. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：301 / 306

页数：6

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