Atomic layer deposited second-order nonlinear optical metamaterial for back-end integration with CMOS-compatible nanophotonic circuitry

被引:28
作者
Clemmen, Stephane [1 ,2 ]
Hermans, Artur [1 ,2 ]
Solano, Eduardo [3 ]
Dendooven, Jolien [3 ]
Koskinen, Kalle [4 ]
Kauranen, Martti [4 ]
Brainis, Edouard [2 ,5 ]
Detavernier, Christophe [3 ]
Baets, Roel [1 ,2 ]
机构
[1] Univ Ghent, Dept Informat Technol, Photon Res Grp, IMEC, B-9000 Ghent, Belgium
[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium
[3] Univ Ghent, Dept Solid State Sci, Fac Sci, B-9000 Ghent, Belgium
[4] Tampere Univ Technol, Opt Lab, FI-33101 Tampere, Finland
[5] Univ Ghent, Phys & Chem Nanostruct Grp, B-9000 Ghent, Belgium
基金
欧洲研究理事会;
关键词
OXIDE THIN-FILMS; 2ND-HARMONIC GENERATION; PRECURSORS; SURFACE; ALD;
D O I
10.1364/OL.40.005371
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report the fabrication of artificial unidimensional crystals exhibiting an effective bulk second-order nonlinearity. The crystals are created by cycling atomic layer deposition of three dielectric materials such that the resulting metamaterial is noncentrosymmetric in the direction of the deposition. Characterization of the structures by second-harmonic generation Maker-fringe measurements shows that the main component of their nonlinear susceptibility tensor is about 5 pm/V, which is comparable to well-established materials and more than an order of magnitude greater than reported for a similar crystal [Appl. Phys. Lett. 107, 121903 (2015)]. Our demonstration opens new possibilities for second-order nonlinear effects on CMOS-compatible nanophotonic platforms. (C) 2015 Optical Society of America
引用
收藏
页码:5371 / 5374
页数:4
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