Phosphorescence Enhancement Triggered by II Stacking in Solid-State [Cu(N-N)(P-P)]BF4 Complexes

被引：112

作者：

Zhang, Liming ^{[1
,2
]}

Li, Bin ^{[1
]}

Su, Zhongmin ^{[3
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] NE Normal Univ, Dept Chem, Changchun 130024, Peoples R China

来源：

LANGMUIR | 2009年 / 25卷 / 04期

基金：

中国国家自然科学基金;

关键词：

CU(I) COMPLEXES; EXCITED-STATES; NANOSENSOR DESIGN; LUMINESCENT; EMISSIONS; GEOMETRY; LIGANDS;

D O I：

10.1021/la803822s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this article, we report a phosphorescence enhancement phenomenon of [Cu(N-N)(P-P)]BF4 complexes in the solid state. The phosphorescence enhancement phenomenon is composed of three features: (1) an obvious emission blue shift, (2) a greatly enhanced photoluminescence quantum yield, and (3) a longer excited-state lifetime. Systematic analyses prove that the main cause of this phenomenon is nonradiative process suppression triggered by the pi stacking between [Cu(N-N)(P-P)]BF4 molecules. The phorsphorescence enhancement widely exists in [Cu(N-N)(P-P)]BF4 complexes because of the pi surfaces in their diimine ligands.

引用

页码：2068 / 2074

页数：7

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