Growth and characterization of Si-doped β-Ga2O3 films by pulsed laser deposition

被引：35

作者：

Xu, C. X. ^{[1
]}

Liu, H. ^{[1
]}

Pan, X. H. ^{[1
]}

Ye, Z. Z. ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

OPTICAL MATERIALS | 2020年 / 108卷

基金：

中国国家自然科学基金;

关键词：

Physical vapor deposition; Epitaxial growth; Thin films; Structural; SURFACE-MORPHOLOGY;

D O I：

10.1016/j.optmat.2020.110145

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

((2) over bar 01) oriented Si-doped beta-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 x 10(18) cm(-3) and a Hall mobility of 0.07 cm(2) V(1)s(1) have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped beta-Ga2O3 films.

引用

页数：4

共 21 条

[1] Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy [J].

Ahmadi, Elaheh ;

Koksaldi, Onur S. ;

Kaun, Stephen W. ;

Oshima, Yuichi ;

Short, Dane B. ;

Mishra, Umesh K. ;

Speck, James S. .

APPLIED PHYSICS EXPRESS, 2017, 10 (04)

[2] Influence of rapid thermal annealing at varied temperatures on conductivity activation energy and,structural properties of Si-doped β-Ga2O3 film grown by pulsed laser deposition [J].

Antoro, Iwan Dwi ;

Itoh, Satoshi ;

Yamada, Satoru ;

Kawae, Takeshi .

CERAMICS INTERNATIONAL, 2019, 45 (01) :747-751

[3] Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates [J].

Baldini, Michele ;

Albrecht, Martin ;

Fiedler, Andreas ;

Irmscher, Klaus ;

Schewski, Robert ;

Wagner, Guenter .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3040-Q3044

[4] Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD [J].

Du, Xuejian ;

Li, Zhao ;

Luan, Caina ;

Wang, Weiguang ;

Wang, Mingxian ;

Feng, Xianjin ;

Xiao, Hongdi ;

Ma, Jin .

JOURNAL OF MATERIALS SCIENCE, 2015, 50 (08) :3252-3257

[5] β-Ga2O3 for wide-bandgap electronics and optoelectronics [J].

Galazka, Zbigniew .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (11)

[6] Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE [J].

Gogova, D. ;

Wagner, G. ;

Baldini, M. ;

Schmidbauer, M. ;

Irmscher, K. ;

Schewski, R. ;

Galazka, Z. ;

Albrecht, M. ;

Fornari, R. .

JOURNAL OF CRYSTAL GROWTH, 2014, 401 :665-669

[7] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[8] Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition [J].

Hu, Daqiang ;

Wang, Ying ;

Zhuang, Shiwei ;

Dong, Xin ;

Zhang, Yuantao ;

Yin, Jingzhi ;

Zhang, Baolin ;

Lv, Yuanjie ;

Feng, Zhihong ;

Du, Guotong .

CERAMICS INTERNATIONAL, 2018, 44 (03) :3122-3127

[9] Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition [J].

Leedy, Kevin D. ;

Chabak, Kelson D. ;

Vasilyev, Vladimir ;

Look, David C. ;

Mahalingam, Krishnamurthy ;

Brown, Jeff L. ;

Green, Andrew J. ;

Bowers, Cynthia T. ;

Crespo, Antonio ;

Thomson, Darren B. ;

Jessen, Gregg H. .

APL MATERIALS, 2018, 6 (10)

[10] Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition [J].

Leedy, Kevin D. ;

Chabak, Kelson D. ;

Vasilyev, Vladimir ;

Look, David C. ;

Boeckl, John J. ;

Brown, Jeff L. ;

Tetlak, Stephen E. ;

Green, Andrew J. ;

Moser, Neil A. ;

Crespo, Antonio ;

Thomson, Darren B. ;

Fitch, Robert C. ;

McCandless, Jonathan P. ;

Jessen, Gregg H. .

APPLIED PHYSICS LETTERS, 2017, 111 (01)

← 1 2 3 →