Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

被引：118

作者：

Gwo, S ^{[1
]}

Wu, CL

Shen, CH

Chang, WH

Hsu, TM

Wang, JS

Hsu, JT

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[2] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

[3] Ind Technol Res Inst, Nanophoton Ctr OES, Hsinchu 310, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 19期

关键词：

D O I：

10.1063/1.1738183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray diffraction, and Raman scattering. At room temperature, these films exhibited strong near-infrared (0.6-0.9 eV) photoluminescence (PL). In addition to the optical absorption measurement of absorption edge and direct band nature, the PL signal was found to depend linearly on the excitation laser intensity over a wide intensity range. These results indicate that the observed PL is due to the emission of direct band-to-band recombination rather than the band-to-defect (or impurity) deep emission. (C) 2004 American Institute of Physics.

引用

页码：3765 / 3767

页数：3

共 16 条

[1] Structure determination of the Si3N4/Si(111)-(8 x 8) surface:: A combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations [J].