Optimization of thermal processing and device design for high-efficiency c-Si solar cells

被引:18
作者
Warabisako, T
Uematsu, T
Muramatsu, S
Tsutsui, K
Ohtsuka, H
Nagata, Y
Sakamoto, M
机构
[1] HITACHI DEVICE ENGN CO LTD, MOBARA, CHIBA 297, JAPAN
[2] HITACHI ULSI ENGN CO LTD, KODAIRA, TOKYO 187, JAPAN
关键词
solar cell; crystalline silicon; carrier lifetime; high efficiency; thermal process;
D O I
10.1016/S0927-0248(97)00085-8
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
To improve the cell performance of single-crystal silicon solar cells, the process conditions have been optimized by monitoring the bulk lifetime after each thermal step in the cell fabrication process. The emitter geometry, i.e., front and rear contact size and pitch were optimized, and the cells were fabricated through a set of environmentally considered processes, especially for surface treatment, oxidation, diffusion, and electrode fabrication, Conversion efficiency of 22.3% in a 4 cm(2) cell, and 22.6% in a 1 cm(2) cell, was attained, respectively, with structural features of SiO2 single-AR, ''inverted-pyramid'' front texture, point-contact with line-emitter for front electrodes, and locally diffused BSF for rear contacts.
引用
收藏
页码:137 / 143
页数:7
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