Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer

被引:44
作者
Cheng, Shun-Wen [1 ]
Han, Ting [2 ]
Huang, Teng-Yung [1 ]
Chang Chien, Yu-Hsin [3 ]
Liu, Cheng-Liang [3 ]
Tang, Ben Zhong [2 ]
Liou, Guey-Sheng [1 ]
机构
[1] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan
[2] Hong Kong Univ Sci & Technol, Dept Chem & Mat Engn, Kowloon, Hong Kong, Peoples R China
[3] Natl Cent Univ, Dept Chem & Mat Engn, Taoyuan 32001, Taiwan
关键词
organic phototransistor; nonvolatile memory; aggregation enhanced emission; photodetectors; polymer electret; FIELD-EFFECT TRANSISTORS; ALL-POLYMER PHOTOTRANSISTORS; BULK HETEROJUNCTION LAYERS; THIN-FILM TRANSISTORS; FLOATING-GATE; POLYIMIDE NANOFIBER; FLASH MEMORY; NANOWIRE; STORAGE; MECHANISM;
D O I
10.1021/acsami.8b02560
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel aggregation enhanced emission (AEE)-active polyamide TPACN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 104 s between these two states with an on/off ratio of 104, and the memory switching can be steadily operated for many cycles. With high photoresponsivity (R) and photosensitivity (S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.
引用
收藏
页码:18281 / 18288
页数:8
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