Deposition of Bismuth Telluride Thick Film by Solidification under Centrifugal Pressure

被引：5

作者：

Kinemuchi, Yoshiaki ^{[1
]}

Aoki, Tomohiro ^{[2
]}

Kaga, Hisashi ^{[1
]}

Okanoue, Kumi ^{[1
]}

Ishiguro, Hirohide ^{[2
]}

Watari, Koji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan

[2] Sintokogio Ltd, Aichi 4428505, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 07期

关键词：

Thick film; gravity; crystal growth; bismuth telluride; GROWTH;

D O I：

10.1007/s11664-008-0640-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bismuth telluride alloys-Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Te3.33Se0.17-have been deposited on polycrystalline zirconia via solidification under centrifugal pressure. The crystal growth under centrifugal pressure was a process in which the starting powders charged in the groove patterns of the substrates were first melted and then solidified under centrifugal acceleration of 10(4) m/s(2). This new process offers c-axis-oriented films with a thickness of more than 100 mu m. A mirror-like surface is another characteristic feature of these films. Owing to their orientation, reasonable power factors such as 4.2 mW/m K-2 and 2.7 mW/m K-2 (in plane) were obtained for p- and n-type films, respectively.

引用

页码：1089 / 1092

页数：4

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