Progress of Si-based nanocrystalline luminescent materials

被引:5
作者
Peng, YC [1 ]
Zhao, XW
Fu, GS
机构
[1] Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microsturct, Beijing 10083, Peoples R China
[3] Tokyo Univ Sci, Fac Sci, Dept Phys, Shinjuku Ku, Tokyo 1628501, Japan
[4] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
来源
CHINESE SCIENCE BULLETIN | 2002年 / 47卷 / 15期
关键词
Si-based nanomaterials; fabricated method; structural characterization; light emitting mechanism; Si-based photoelectronic devices;
D O I
10.1360/02tb9275
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x < 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.
引用
收藏
页码:1233 / 1242
页数:10
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