Piezoelectricity in poled Ge-doped silica thin films

被引：14

作者：

Uno, T ^{[1
]}

Noge, S ^{[1
]}

机构：

[1] Kanagawa Inst Technol, Atsugi, Kanagawa 2430292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 5B期

关键词：

Ge-doped silica; silica; germanosilicate; piezoelectricity; piezoelectric thin film; poling;

D O I：

10.1143/JJAP.41.3431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents piezoelectricity in germanium-doped silica (germanosilicate) films produced by poling treatment. The germanosilicate films were prepared on Si substrates by RF magnetron sputtering. The films were poled by electric fields of 2-4 x 10(7) V/m, at a temperature above 300degreesC. Before the poling, no piezoelectric response was observed. After the poling, a Opiezoelectric response caused by normal stress T(33) on the film surface appeared. The maximum value of the piezoelectric constant d(33) of the poled film was larger than d(11) of quartz by 20-30%. Various applications of the piezoelectric Ge:SiO(2) film are expected to emerge.

引用

页码：3431 / 3432

页数：2

共 4 条

[1] Electro-optic switch constructed with a poled silica-based waveguide on a Si substrate [J].