Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation

被引:15
作者
Alekseev, P. A. [1 ]
Dunaevskiy, M. S. [1 ,2 ]
Kirilenko, D. A. [1 ]
Smirnov, A. N. [1 ]
Davydov, V. Yu. [1 ]
Berkovits, V. L. [1 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] ITMO Univ, St Petersburg 197101, Russia
基金
俄罗斯基础研究基金会;
关键词
BAND-GAP PHOTOLUMINESCENCE; CORE-SHELL NANOWIRES; GALLIUM-ARSENIDE; SOLAR-CELLS; GROWTH; DEGRADATION; BETA-GA2O3; HETEROSTRUCTURES; LUMINESCENCE;
D O I
10.1063/1.4976681
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the structural and chemical transformations induced by focused laser beam in GaAs nanowires with an axial zinc-blende/wurtzite (ZB/WZ) heterostructure. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For both the components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaOx. The latter compound is responsible for the appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under an increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of beta-Ga2O3 nanocrystals proceed on the surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in a visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with the formation of beta-Ga2O3 nanocrystals occurs. Observed transformation of WZ-GaAs to beta-Ga2O3 nanocrystals presents an available way for the creation of axial and radial heterostructures ZB-GaAs/beta-Ga2O3 f or optoelectronic and photonic applications. Published by AIP Publishing.
引用
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页数:6
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