Solution-Phase Synthesis of Well-Defined Indium Sulfide Nanorods

A new and facile solution phase synthesis method that offers a pathway to very well defined In 2S 3 nanorods at relatively low temperatures was reported. Nanorods of In 2S 3 were readily prepared by the fast injection of di-tert-butyl disulfide into a solution of indium acetylacetonate in oleylamine under anhydrous conditions. An anisotropic nanorod morphology for the In 2S 3 nanocrystals was observed by transmission electron microscopy (TEM). Statistical analysis of approximately 300 nanorods revealed an average diameter of 11.5 ± 1.3 nm. X-ray photoelectron spectroscopy (XPS) was used to confirm the elemental composition of the In 2S 3 nanorods. The band gap and HOMO and LUMO energy levels estimated for these nanorods suggest that they may be suitable alternatives to semiconductor nanocrystals in optoelectronic devices.