Present paper reports the growth mechanism of hexagonal ZnO nanocrystals (NCs) with their NO2 gas and humidity sensing. Thin film of ZnO was prepared using the zinc acetate with ethanol as precursors. Prepared thin film was annealed at 450 degrees C for 2 h which led to necking and coarsening of nanocrystals. Hexagonal crystalline nature of film was revealed by the XRD with the crystallite size similar to 71 nm and AFM confirmed this fact. Film was exposed to NO2 and moisture separately and variations in resistance with the increasing %RH were recorded. The film gave highest sensing response for 20 ppm NO2 as 150 and for moisture, the highest sensitivity was found as 10.91 M Omega/%RH. (C) 2015 Elsevier B.V. All rights reserved.
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Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
Viswanatha, Ranjani
Santra, Pralay K.
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机构:Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
Santra, Pralay K.
Dasgupta, Chandan
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机构:Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
Dasgupta, Chandan
Sarma, D. D.
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机构:Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
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South China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
Chen, Quan
Chen, Yu
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Guangdong Univ Technol, Inst Anal & Test Ctr, Guangzhou 510090, Peoples R ChinaSouth China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
Chen, Yu
Wang, Jun
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Wuhan Univ, Sch Elect Engn & Automat, Wuhan 430000, Peoples R ChinaSouth China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
Wang, Jun
Liu, Meizhuang
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South China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
Liu, Meizhuang
Chen, Zuxin
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South China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R ChinaSouth China Normal Univ, Inst Semicond, Guangzhou 510631, Peoples R China
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Li, Chao
Lin, Ying
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Lin, Ying
Li, Feng
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Li, Feng
Zhu, Linghui
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Zhu, Linghui
Sun, Dongming
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Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Sun, Dongming
Shen, Liang
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Jilin Univ, Coll Elect Sci & Engn, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Shen, Liang
Chen, Yu
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Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Chen, Yu
Ruan, Shengping
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China