Theory of semiconductor superjunction devices

A new theory of semiconductor devices, called ''semiconductor superjunction (SJ) theory''; is presented. To overcome the trade-off relationship between breakdown voltage and on-resistance of conventional semiconductor devices, SJ devices utilize a number of alternately stacked, p- and n-type, heavily doped, thin semiconductor layers. By controlling the degree of doping and the thickness of these layers, according to the SJ theory: this structure operates as a pn junction with low oil-resistance and high breakdown voltage, Analytical formulas for the ideal specific on-resistance and the ideal breakdown voltage of SJ devices are theoretically derived. Analysis based on the formulas and device simulations reveals that the all-resistance of SJ devices can be reduced to less than 10(-2) that of conventional devices.