Atomic layer etching of silicon nitride using infrared annealing for short desorption time of ammonium fluorosilicate

被引：51

作者：

Miyoshi, Nobuya ^{[1
]}

Kobayashi, Hiroyuki ^{[1
]}

Shinoda, Kazunori ^{[1
]}

Kurihara, Masaru ^{[1
]}

Watanabe, Tomoyuki ^{[2
]}

Kouzuma, Yutaka ^{[2
]}

Yokogawa, Kenetsu ^{[2
]}

Sakai, Satoshi ^{[2
]}

Izawa, Masaru ^{[2
]}

机构：

[1] Hitachi Ltd, Ctr Technol Innovat Elect, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi High Technol Corp, Elect Device Syst Business Grp, Kudamatsu, Yamaguchi 7440002, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 06期

关键词：

LIMITING THERMAL-REACTIONS; NF3-ADDED HYDROGEN; SN(ACAC)(2); SI; OXIDATION; SURFACES; NH3/NF3; REMOVAL; FILMS;

D O I：

10.7567/JJAP.56.06HB01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An atomic layer etching process for silicon nitride (Si3N4) has been developed in which ammonium fluorosilicate [(NH4)(2)SiF6] is formed and desorbed using infrared annealing. The cycle of forming and removing ammonium fluorosilicate was repeated, demonstrating that the Si3N4 etching depth was accurately controlled with high selectivity to SiO2 by changing the number of cycle. An X-ray photoelectron spectroscopy peak, which had been previously assigned as N-H bond of an ammonium salt, was observed after radical exposure, indicating that the ammonium fluorosilicate-based modified layer had formed. This peak disappeared after infrared annealing for 10 s, demonstrating desorption of the modified layer. In thermal desorption spectroscopy, NH3, HF, and SiFx were detected, providing further evidence for the formation of the ammonium fluorosilicate-based modified layer. In addition, this layer has a multilayer structure, protecting the Si3N4 from exposure to reactive radicals. (C) 2017 The Japan Society of Applied Physics

引用

页数：7

共 36 条

[21] Mechanism of Thermal Al2O3 Atomic Layer Etching Using Sequential Reactions with Sn(acac)2 and HF [J].

Lee, Younghee ;

DuMont, Jaime W. ;

George, Steven M. .

CHEMISTRY OF MATERIALS, 2015, 27 (10) :3648-3657

[22] Atomic Layer Etching of HfO2 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and HF [J].

Lee, Younghee ;

DuMont, Jaime W. ;

George, Steven M. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (06) :N5013-N5022

[23] Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride [J].

Lee, Younghee ;

George, Steven M. .

ACS NANO, 2015, 9 (02) :2061-2070

[24]

Li C., 2016, J. Vac. Sci. Technol. A Vacuum, Surfaces, V34, P041307, DOI DOI 10.1116/1.4954961

[25] SELF-LIMITED LAYER-BY-LAYER ETCHING OF SI BY ALTERNATED CHLORINE ADSORPTION AND AR+ ION IRRADIATION [J].

MATSUURA, T ;

MUROTA, J ;

SAWADA, Y ;

OHMI, T .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2803-2805

[26] Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma [J].

Metzler, Dominik ;

Li, Chen ;

Engelmann, Sebastian ;

Bruce, Robert L. ;

Joseph, Eric A. ;

Oehrlein, Gottlieb S. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (01)

[27] Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma [J].

Metzler, Dominik ;

Bruce, Robert L. ;

Engelmann, Sebastian ;

Joseph, Eric A. ;

Oehrlein, Gottlieb S. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (02)

[28] DAMAGE-FREE SELECTIVE ETCHING OF SI NATIVE OXIDES USING NH3/NF3 AND SF6/H2O DOWN-FLOW ETCHING [J].

NISHINO, H ;

HAYASAKA, N ;

OKANO, H .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :1345-1348

[29] Atomic Layer Etching at the Tipping Point: An Overview [J].

Oehrlein, G. S. ;

Metzler, D. ;

Li, C. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (06) :N5041-N5053

[30] Dry cleaning technology for removal of silicon native oxide employing hot NH3/NF3 exposure [J].

Ogawa, H ;

Arai, T ;

Yanagisawa, M ;

Ichiki, T ;

Horiike, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08) :5349-5358

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