A 185-215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

被引：32

作者：

Andersson, Michael A. ^{[1
]}

Zhang, Yaxin ^{[1
]}

Stake, Jan ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Terahertz & Millimetre Wave Lab, S-41296 Gothenburg, Sweden

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2017年 / 65卷 / 01期

关键词：

Coplanar waveguide (CPW); field-effect transistors (FETs); graphene; harmonic balance; millimeterwave integrated circuits; subharmonic resistive mixers; FIELD-EFFECT TRANSISTORS; WAVE; GHZ;

D O I：

10.1109/TMTT.2016.2615928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 mu m and a gate width of 2x40 mu m. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of similar to 50 Omega and the ON-OFF ratios of >= 4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-mu m-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 +/- 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.

引用

页码：165 / 172

页数：8

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