Advanced MOSFET modeling for RF IC design

被引：0

作者：

Cheng, YH ^{[1
]}

机构：

[1] Skyworks Solut, Irvine, CA 92612 USA

来源：

NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年

关键词：

mosfet modeling; rf modeling; hf mosfet modeling; rf ic design; rf cmos;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, advanced MOSFET modeling for radio-frequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with comparisons of the data for both y parameter and f(T) characteristics. The high frequency (HF) noise and distortion modeling issues are also discussed by showing the validation results against measured data. The developed RF MOSFET model can be the basis of a predictive and statistical modeling approach for RF applications.

引用

页码：90 / 95

页数：6

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