Tuning Phosphorene Nanoribbon Electronic Structure through Edge Oxidization

被引:32
作者
Ding, Bangfu [1 ]
Chen, Wei [2 ]
Tang, Zilong [3 ]
Zhang, Junying [1 ]
机构
[1] Beihang Univ, Minist Educ, Key Lab Micronano Measurement Manipulat & Phys, Beijing 100191, Peoples R China
[2] Univ Texas Arlington, Dept Phys, POB 19059, Arlington, TX 76019 USA
[3] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
基金
美国国家科学基金会; 高等学校博士学科点专项科研基金;
关键词
ULTRATHIN BLACK PHOSPHORUS; STRAIN; SEMICONDUCTOR; BEHAVIOR; BANDGAP; PHASE;
D O I
10.1021/acs.jpcc.5b09159
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Molecular orbital theory predicts that interactions between lone-pair electrons give rise to van der Waals forces between layers due to the nonequivalent hybridization in bulk black phosphorus. First-principles calculations show that phosphorene nanoribbons (PNRs) have a high activity and can be bonded easily with oxygen atoms and hydroxyl groups, indicating that the PNRs can be oxidized easily. The cliff PNR configuration can be maintained when it is passivated with hydroxyl groups, indicating that it could be stable in a strong alkaline environment. Upon oxidation of their zigzag, armchair, and cliff edges, phosphorene nanoribbons can be changed from semimetallic to semiconducting, and the band gap can be changed from direct to indirect. OHO- [(OH + O)-] and OH- [(O + H)-] passivated PNRs have intrinsic spin magnetic moments of approximately 2.00 mu(B), which originate from the edge unsaturation electrons and the symmetry reduction. Therefore, oxidized PNRs might have potential applications in photoelectronic and spinelectronic devices.
引用
收藏
页码:2149 / 2158
页数:10
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