Germanium substitution endowing Cr3+-doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence

被引:71
作者
Zhang, Yi [1 ]
Huang, Rui [1 ]
Li, Hongliang [1 ]
Hou, Dejian [1 ]
Lin, Zhenxu [1 ]
Song, Jie [1 ]
Guo, Yuzheng [2 ]
Lin, Huihong [1 ]
Song, Chao [1 ]
Lin, Zewen [3 ]
Robertson, John [4 ]
机构
[1] Hanshan Normal Univ, Sch Mat Sci & Engn, Chaozhou 521041, Guangdong, Peoples R China
[2] Swansea Univ, Coll Engn, Swansea SA1 8EN, W Glam, Wales
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[4] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
基金
中国国家自然科学基金;
关键词
Persistent luminescence; Near-infrared; First-principles; Antisite defects; Energy storage; LASTING PHOSPHORESCENCE; VISIBLE-LIGHT; DEEP-TISSUE; NANOPARTICLES; GALLATE; CR3+; 1ST-PRINCIPLES; NANOPHOSPHORS; SPINELS; RED;
D O I
10.1016/j.actamat.2018.06.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present novel near-infrared (NIR) Cr3+-doped non-gallate super-long-persistence phosphors (Zn1+xAl2-2xGexO4:Cr3+) by Germanium substitution in the original ZnAl2O4:Cr3+. Unlike the negligible NIR persistent luminescence of ZnAl2O4:Cr3+ upon UV or visible light excitation, the Ge substituted phosphors feature strong and super-long-persistent luminescence at approximately 650-750 nm for more than 120 h. The relation between the Ge substitution and the defect trapping states is investigated systematically. The experimental results combined with the first-principles calculations reveal that Ge-Zn(OO center dot) and Ge-Al(O center dot) in the spinel structure would introduce shallow and deep defect states in the band gap to serve as new efficient traps, which are mainly responsible for the strong and super-long-persistent luminescence upon UV or visible light excitation. The present advanced phosphors is an alternative candidate for applications in biomedical imaging and night-vision surveillance. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:214 / 221
页数:8
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