Substitution effect on thermoelectric properties of ZrNiSn based half-Heusler compounds

被引：59

作者：

Muta, Hiroaki ^{[1
]}

Kanemitsu, Takanori ^{[1
]}

Kurosaki, Ken ^{[1
]}

Yamanaka, Shinsuke ^{[1
]}

机构：

[1] Osaka Univ, Div Sustainable Energy & Environm Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

MATERIALS TRANSACTIONS | 2006年 / 47卷 / 06期

关键词：

thermoelectric; electrical conductivity; Seebeck coefficient; thermal conductivity; half-Heusler; ambipolar diffusion effect;

D O I：

10.2320/matertrans.47.1453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermoelectric properties of ZrNiSn based half-Heusler compounds, Zr0.7X0.3NiSn (X = Ti, Hf), ZrNi0.7Y0.3Sn (Y = Pd, Pt), and ZrNi1.05Sn were investigated from room temperature to 1000 K. All the substitutions and addition of the excess nickel drastically decreased the thermal conductivity. The experimental values at room temperature were in good agreement with those estimated by the disorder scattering theory. The thermal conductivity exhibited considerable increase above 700 K for all the samples. It was corresponding to the transition of electrical properties, indicating that the generated hole conduction at high temperatures provided the increase. The additional electronic thermal conductivity caused by the ambipolar diffusion effect is discussed.

引用

页码：1453 / 1457

页数：5

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