Ultraclean individual suspended single-walled carbon nanotube field effect transistor

被引：3

作者：

Liu, Siyu ^{[1
,2
]}

Zhang, Jian ^{[2
,3
]}

Nshimiyimana, Jean Pierre ^{[2
,3
]}

Chi, Xiannian ^{[2
,3
]}

Hu, Xiao ^{[2
,3
]}

Wu, Pei ^{[2
,3
]}

Liu, Jia ^{[2
,3
]}

Wang, Gongtang ^{[1
]}

Sun, Lianfeng ^{[2
]}

机构：

[1] Shandong Normal, Sch Phys & Elect, Jinan 250258, Shandong, Peoples R China

[2] Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

NANOTECHNOLOGY | 2018年 / 29卷 / 17期

基金：

中国国家自然科学基金;

关键词：

single-walled carbon nanotubes; filed effect transistor; ultraclean device; BALLISTIC TRANSPORT; QUANTUM DOTS;

D O I：

10.1088/1361-6528/aaaf4f

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (similar to 50 k Omega), mobility of 8600 cm(2) V-1 s(-1) and large on/off ratio (similar to 10(5)) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

引用

页数：6

共 23 条

[1] Logic circuits with carbon nanotube transistors [J].