All-Solution-Processed Inverted Quantum-Dot Light-Emitting Diodes

被引:95
|
作者
Castan, Alice [1 ]
Kim, Hyo-Min [1 ]
Jang, Jin [1 ]
机构
[1] Kyung Hee Univ, Adv Display Res Ctr, Dept Informat Display, Seoul 130701, South Korea
关键词
all-solution-process; inverted structure; polyoxyethylene tridecyl ether; QLED; quantum dot; ALUMINUM-ZINC-OXIDE; DEVICES;
D O I
10.1021/am404876p
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Quantum dots are a promising new candidate for the emissive material in light-emitting devices for display applications. The fabrication of such devices by solution processing allows considerable cost reduction and is therefore very attractive for industrial manufacturers. We report all solution-processed colloidal quantum-dot light-emitting diodes (QLEDs) with an inverted structure. The red, green, and blue devices showed maximum luminances of 12510, 32 370, and 249 cd/m(2) and turn-on voltages of 2.8, 3.6, and 3.6 V, respectively. We investigate the effect of a surfactant addition in the hole injection layer (HIL), with the aim of facilitating layer deposition and thereby enhancing device performance. We demonstrate that in the device structure presented in this study, a small amount of surfactant in the HIL can significantly improve the performance of the QLED.
引用
收藏
页码:2508 / 2515
页数:8
相关论文
共 50 条
  • [41] Origin of Positive Aging in Quantum-Dot Light-Emitting Diodes
    Su, Qiang
    Sun, Yizhe
    Zhang, Heng
    Chen, Shuming
    ADVANCED SCIENCE, 2018, 5 (10):
  • [42] Ultrahigh-resolution quantum-dot light-emitting diodes
    Meng, Tingtao
    Zheng, Yueting
    Zhao, Denglin
    Hu, Hailong
    Zhu, Yangbin
    Xu, Zhongwei
    Ju, Songman
    Jing, Jipeng
    Chen, Xiang
    Gao, Hongjin
    Yang, Kaiyu
    Guo, Tailiang
    Li, Fushan
    Fan, Junpeng
    Qian, Lei
    NATURE PHOTONICS, 2022, 16 (04) : 297 - +
  • [43] Device Characteristics of Inverted Red Colloidal Quantum-Dot Light-Emitting Diodes Depending on Hole Transport Layers
    Lee, Donggu
    Lim, Jaehoon
    Park, Myeongjin
    Kang, Chan-Mo
    Lee, Hyunkoo
    SCIENCE OF ADVANCED MATERIALS, 2021, 13 (05) : 917 - 921
  • [44] Exploring performance degradation of quantum-dot light-emitting diodes
    Liu, Aqiang
    Cheng, Chunyan
    Tian, Jianjun
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (22) : 8642 - 8649
  • [45] Influence of interfacial wetting ability on hole injection efficiency of PEDOT: PSS for solution processed normal quantum-dot light-emitting diodes
    Wu, Jun
    Deng, Yukun
    Zhang, Xiaobing
    Xia, Jun
    Lei, Wei
    ORGANIC ELECTRONICS, 2018, 58 : 191 - 196
  • [46] High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers
    Tang, Zhaobing
    Lin, Jie
    Wang, Lishuang
    Lv, Ying
    Hu, Yongsheng
    Fan, Yi
    Guo, Xiaoyang
    Zhao, Jialong
    Wang, Yunjun
    Liu, Xingyuan
    JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (35) : 9138 - 9145
  • [47] Effect and mechanism of encapsulation on aging characteristics of quantum-dot light-emitting diodes
    Chen, Zinan
    Su, Qiang
    Qin, Zhiyuan
    Chen, Shuming
    NANO RESEARCH, 2021, 14 (01) : 320 - 327
  • [48] Tailoring Nanostructures of Quantum Dots toward Efficient and Stable All-Solution Processed Quantum Dot Light-Emitting Diodes
    Wang, Lixi
    Pan, Jiangyong
    Liu, Chengjun
    Zhao, Zihan
    Fang, Fan
    Wang, Ye
    Wang, Guangzhao
    Lei, Wei
    Chen, Jing
    Zhao, Dewei
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (15) : 17861 - 17868
  • [49] Ultrastable Quantum-Dot Light-Emitting Diodes by Suppression of Leakage Current and Exciton Quenching Processes
    Zhang, Han
    Sui, Ning
    Chi, Xiaochun
    Wang, Yinghui
    Liu, Qinghui
    Zhang, Hanzhuang
    Ji, Wenyu
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (45) : 31385 - 31391
  • [50] All-Quantum-Dot Infrared Light-Emitting Diodes
    Yang, Zhenyu
    Voznyy, Oleksandr
    Liu, Mengxia
    Yuan, Mingjian
    Ip, Alexander H.
    Ahmed, Osman S.
    Levina, Larissa
    Kinge, Sachin
    Hoogland, Sjoerd
    Sargent, Edward H.
    ACS NANO, 2015, 9 (12) : 12327 - 12333