Fabrication of high frequency ZnO thin film SAW devices on silicon substrate with a diamond-like carbon buffer layer using RF magnetron sputtering

被引:30
作者
Shih, Wen-Ching [1 ]
Huang, Rei-Ching [1 ]
机构
[1] Tatung Univ, Grad Program Electroopt Engn, Taipei 104, Taiwan
关键词
Surface acoustic wave (SAW); Diamond-like carbon (DLC); Zinc oxide (ZnO); Sputtering;
D O I
10.1016/j.vacuum.2008.04.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond-like carbon (DLC) film is a promising candidate for surface acoustic wave (SAW) device applications because of its higher acoustic velocity. A zinc oxide (ZnO) thin film has been deposited on DLC film/Si substrate by RF magnetron sputtering: the optimized parameters for the ZnO sputtering are RF power density of 0.55 W/cm(2), substrate temperature of 380 degrees C, gas flow ratio (Ar/O(2)) of 5/1 and total sputter pressure of 1.33 Pa. The results showed that when the thickness of the ZnO thin films was decreased, the phase velocity of the SAW devices increased significantly. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码:675 / 678
页数:4
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