Electrical current switching of the noncollinear antiferromagnet Mn3GaN

被引：47

作者：

Hajiri, T. ^{[1
]}

Ishino, S. ^{[1
]}

Matsuura, K. ^{[1
]}

Asano, H. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Phys, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2019年 / 115卷 / 05期

基金：

日本学术振兴会;

关键词：

HALL; TORQUE;

D O I：

10.1063/1.5109317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn3GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5x10(6) A/cm(2), whereas no significant change is observed up to similar to 10(8) A/cm(2) in Mn3GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn3GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn3GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics.

引用

页数：4

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