Influence of the interface on the electronic channel switching of a Fe-Ag thin film on a Si substrate

被引：4

作者：

Alonso, J. ^{[1
]}

Fdez-Gubieda, M. L. ^{[1
]}

Sarmiento, G. ^{[1
]}

Barandiaran, J. M. ^{[1
]}

Svalov, A. ^{[1
]}

Orue, I.

Chaboy, J. ^{[2
]}

Fernandez Barquin, L. ^{[3
]}

Meneghini, C. ^{[4
]}

Neisius, T. ^{[5
]}

Kawamura, N. ^{[6
]}

机构：

[1] Univ Basque Country, EHU, Dept Elect & Elect, E-48080 Bilbao, Spain

[2] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain

[3] Univ Cantabria, CITIMAC, E-39005 Santander, Spain

[4] Univ Roma 3, Dipartimento Fis E Amaldi, I-00146 Rome, Italy

[5] Univ Paul Cezanne, CP2M Lab, F-13397 Marseille, France

[6] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795148, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期

关键词：

discontinuous metallic thin films; electrical resistivity; elemental semiconductors; interface structure; iron alloys; localised states; semiconductor-metal boundaries; silicon; silver alloys; transmission electron microscopy; X-ray absorption spectra; MAGNETOTRANSPORT PROPERTIES;

D O I：

10.1063/1.3205124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FexAg100-x granular thin films, being 20 < x < 70, were prepared by pulsed laser deposition. The thermal evolution of the electric resistance shows a dramatic drop in the range of 200 < T < 300 K, completely reversible with temperature and associated to a current switching between the granular thin film and its Si substrate. High resolution transmission electron microscopy measurements have revealed an amorphous interface between the thin film and the substrate, and x-ray absorption spectroscopy studies have demonstrated an electronic localization associated to the Fe atoms in this interface, which is intrinsically responsible for the current switching.

引用

页数：3

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